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An NPN transistor comprises two semiconductor junctions that share a thin p-doped region, and a PNP transistor comprises two semiconductor junctions that share a thin n-doped region. N-type means doped with impurities (such as phosphorus or arsenic ) that provide mobile electrons, while p-type means doped with impurities (such as boron ) that ...
NPN transistor. To make an NPN transistor, the anodes of both diodes are back-to-back connected to form a large P type base region. [1] Base biasing.
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics , a common collector amplifier (also known as an emitter follower ) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies , typically used as a voltage buffer .
An NPN grown-junction transistor with the cover removed to show the germanium ingot and the base wire. The grown-junction transistor was the first type of bipolar junction transistor made. [1] It was invented by William Shockley at Bell Labs on June 23, 1948 [2] (patent filed June 26, 1948), six months after the first bipolar point-contact ...
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...