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Severely overloaded Zener diodes in reverse bias shorting. A sufficiently high voltage causes avalanche breakdown of the Zener junction; that and a large current being passed through the diode causes extreme localised heating, melting the junction and metallisation and forming a silicon-aluminium alloy that shorts the terminals.
A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
The diode is made in axial-lead DO-35 glass package. [1] Regulating voltages varies from 2.4 V to 75 V with a total power dissipation maximum of 500 mW. In some datasheets, the series is labelled as zener diode, [2] but this is not always the case as the series relies on avalanche breakdown for higher voltage. [3]
Electrically, these devices resemble Zener diodes, with the following major differences: They rely on gas ionization, rather than Zener breakdown; The unregulated supply voltage must be 15–20% above the nominal output voltage to ensure that the discharge starts; The output can be higher than nominal if the current through the tube is too low.
Temperature compensated Zener reference diode, 1.22 V breakdown voltage [50] [51] LM329 Temperature compensated Zener reference diode, 6.9 V breakdown voltage [52] LM136 LM236 LM336 2.5 V or 5 V Zener reference diode with temperature coefficient trimmer [53] LM368 Yes 2.5 V precision voltage reference [54] LM169 LM369 LM199 Yes