Ad
related to: where is germanium used in electronics research journal related
Search results
Results From The WOW.Com Content Network
Germanium is mined primarily from sphalerite (the primary ore of zinc), though germanium is also recovered commercially from silver, lead, and copper ores. Elemental germanium is used as a semiconductor in transistors and various other electronic devices. Historically, the first decade of semiconductor electronics was based entirely on germanium.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Organogermanium compounds are used in relatively few commercial applications. Isobutylgermane, a volatile colorless liquid, is used in MOVPE (Metalorganic Vapor Phase Epitaxy) in the deposition of Ge semiconductor films. Propagermanium, also known as Ge-132, and spirogermanium are drugs. [citation needed]
Germanium detectors are mostly used for gamma spectroscopy in nuclear physics, as well as x-ray spectroscopy. While silicon detectors cannot be thicker than a few millimeters, germanium can have a sensitive layer ( depletion region ) thickness of centimeters, and therefore can be used as a total absorption detector for gamma rays up to a few MeV.
The material is created in a process similar to that of silicene and graphene, in which high vacuum and high temperature are used to deposit a layer of germanium atoms on a substrate. [ 2 ] [ 3 ] [ 4 ] High-quality thin films of germanene have revealed unusual two-dimensional structures with novel electronic properties suitable for ...
SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS ...
Unlike later semiconductor devices, it was possible for an amateur to make a point-contact transistor, starting with a germanium point-contact diode as a source of material (even a burnt-out diode could be used; and the transistor could be re-formed if damaged, several times if necessary). [3]
Germanium-tin is an alloy of the elements germanium and tin, both located in group 14 of the periodic table. It is only thermodynamically stable under a small composition range. Despite this limitation, it has useful properties for band gap and strain engineering of silicon-integrated optoelectronic and microelectronic semiconductor devices.