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There are two types of stacking faults caused by Frank partial dislocations: intrinsic and extrinsic. An intrinsic stacking fault forms by vacancy agglomeration and there is a missing plane with sequence ABCA_BA_BCA, where BA is the stacking fault. [5] An extrinsic stacking fault is formed from interstitial agglomeration, where there is an ...
An extrinsic property is not essential or inherent to the subject that is being characterized. For example, mass is an intrinsic property of any physical object , whereas weight is an extrinsic property that depends on the strength of the gravitational field in which the object is placed.
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
The current which will flow in an intrinsic semiconductor consists of both electron and hole current. That is, the electrons which have been freed from their lattice positions into the conduction band can move through the material. In addition, other electrons can hop between lattice positions to fill the vacancies left by the freed electrons.
The carrier concentration can be calculated by treating electrons moving back and forth across the bandgap just like the equilibrium of a reversible reaction from chemistry, leading to an electronic mass action law. The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials:
In an intrinsic or lightly doped semiconductor, μ is close enough to a band edge that there are a dilute number of thermally excited carriers residing near that band edge. In semiconductors and semimetals the position of μ relative to the band structure can usually be controlled to a significant degree by doping or gating.
Interfaces between two materials, such as a semiconductor-oxide or semiconductor-metal interface; Interfaces between solid and liquid phases. Generally, extrinsic surface states cannot easily be characterized in terms of their chemical, physical or structural properties.