Search results
Results From The WOW.Com Content Network
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor ...
An extrinsic property is not essential or inherent to the subject that is being characterized. For example, mass is an intrinsic property of any physical object , whereas weight is an extrinsic property that depends on the strength of the gravitational field in which the object is placed.
There are two types of stacking faults caused by Frank partial dislocations: intrinsic and extrinsic. An intrinsic stacking fault forms by vacancy agglomeration and there is a missing plane with sequence ABCA_BA_BCA, where BA is the stacking fault. [5] An extrinsic stacking fault is formed from interstitial agglomeration, where there is an ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
The carrier concentration can be calculated by treating electrons moving back and forth across the bandgap just like the equilibrium of a reversible reaction from chemistry, leading to an electronic mass action law. The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials:
Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced. The conductivity of semiconductors may easily be modified by introducing impurities into their crystal lattice. The process of adding controlled impurities to a semiconductor is known as doping.
The current which will flow in an intrinsic semiconductor consists of both electron and hole current. That is, the electrons which have been freed from their lattice positions into the conduction band can move through the material. In addition, other electrons can hop between lattice positions to fill the vacancies left by the freed electrons.
Since traps can absorb differences in momentum between the carriers, SRH is the dominant recombination process in silicon and other indirect bandgap materials. However, trap-assisted recombination can also dominate in direct bandgap materials under conditions of very low carrier densities (very low level injection) or in materials with high ...