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A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).
Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each branch of the loop is marked with a direction represented by an arrow.
A MOSFET can be made to operate as a resistor, so the whole circuit can be made with n-channel MOSFETs only. NMOS circuits are slow to transition from low to high. When transitioning from high to low, the transistors provide low resistance, and the capacitive charge at the output drains away very quickly (similar to discharging a capacitor ...
An automotive wiring diagram, showing useful information such as crimp connection locations and wire colors. These details may not be so easily found on a more schematic drawing. A wiring diagram is a simplified conventional pictorial representation of an electrical circuit. It shows the components of the circuit as simplified shapes, and the ...
A characteristic of diode-connected transistors is that they are always in the saturation region for metal–oxide–semiconductor field-effect transistors (MOSFETs) and junction-gate field-effect transistors (JFETs), and in the active region for bipolar junction transistors (BJTs). A diode-connected transistor is made by connecting
The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1] The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use. [2] Packaged in a TO-92 enclosure, the 2N7000 is rated to withstand 60 volts and can switch 200 millamps.