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The D-Wave One was built on early prototypes such as D-Wave's Orion Quantum Computer. The prototype was a 16-qubit quantum annealing processor, demonstrated on February 13, 2007, at the Computer History Museum in Mountain View, California. [15] D-Wave demonstrated what they claimed to be a 28-qubit quantum annealing processor on November 12 ...
annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the bonding process is also referred to as silicon direct bonding or silicon fusion bonding.
Ultra-high-purity steam, also called the clean steam, UHP steam or high purity water vapor, is used in a variety of industrial manufacturing processes that require oxidation or annealing. These processes include the growth of oxide layers on silicon wafers for the semiconductor industry, originally described by the Deal-Grove model, and for the ...
Process annealing, also called intermediate annealing, subcritical annealing, or in-process annealing, is a heat treatment cycle that restores some of the ductility to a product being cold-worked so it can be cold-worked further without breaking. The temperature range for process annealing ranges from 260 °C (500 °F) to 760 °C (1400 °F ...
Rapid thermal anneal. Rapid thermal anneal (RTA) in rapid thermal processing is a process used in semiconductor device fabrication which involves heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film ...
Anneal furnace, 2018. Furnace annealing is a process used in semiconductor device fabrication which consist of heating multiple semiconductor wafers in order to affect their electrical properties. Heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film to film or film to wafer substrate ...
e. The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski ...
The adhesive bonding with organic materials, i.e. BCB or SU-8, has simple process properties and the ability to form high aspect ratio micro structures. The bonding procedure is based on polymerization reaction of organic molecules to form long polymer chains during annealing. This cross-link reaction forms BCB and SU-8 to a solid polymer layer ...