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Double Data Rate 2 Synchronous Dynamic Random-Access Memory (DDR2 SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It is a JEDEC standard (JESD79-2); first published in September 2003. [2] DDR2 succeeded the original DDR SDRAM specification, and was itself succeeded by DDR3 SDRAM in 2007.
(memory density) This is the total memory capacity of the chip. Example: 128 Mib. (memory depth) × (memory width) Memory depth is the memory density divided by memory width. Example: for a memory chip with 128 Mib capacity and 8-bit wide data bus, it can be specified as: 16 Meg × 8. Sometimes the "Mi" is dropped, as in 16×8.
DDR2 started to be effective by the end of 2004, as modules with lower latencies became available. [19] Memory manufacturers stated that it was impractical to mass produce DDR1 memory with effective transfer rates in excess of 400 MHz (i.e. 400 MT/s and 200 MHz external clock) due to internal speed limitations.
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).
Memory controller with differential serial connections to DDR2 FB-DIMMs. The AMB is visible in the center of each DIMM. A Fully Buffered DIMM (FB-DIMM) is a type of memory module used in computer systems. It is designed to improve memory performance and capacity by allowing multiple memory modules to be each connected to the memory controller ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...