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Double Data Rate 2 Synchronous Dynamic Random-Access Memory (DDR2 SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It is a JEDEC standard (JESD79-2); first published in September 2003. [2] DDR2 succeeded the original DDR SDRAM specification, and was itself succeeded by DDR3 SDRAM in 2007.
The DDR2 RAM that it is compatible with is known to be double-pumped and to have an Input/Output Bus twice that of the true FSB frequency (effectively transferring data 4 times a clock cycle), so to run the system synchronously (see front-side bus) the type of RAM that is appropriate is quadruple 266 MHz, or DDR2-1066 (PC2-8400 or PC2-8500 ...
DDR2 started to be effective by the end of 2004, as modules with lower latencies became available. [19] Memory manufacturers stated that it was impractical to mass produce DDR1 memory with effective transfer rates in excess of 400 MHz (i.e. 400 MT/s and 200 MHz external clock) due to internal speed limitations.
(memory density) This is the total memory capacity of the chip. Example: 128 Mib. (memory depth) × (memory width) Memory depth is the memory density divided by memory width. Example: for a memory chip with 128 Mib capacity and 8-bit wide data bus, it can be specified as: 16 Meg × 8. Sometimes the "Mi" is dropped, as in 16×8.
DRAM load on the command/address (CA) bus can be reduced by using registered memory. [citation needed] Predating the term rank (sometimes also called row) is the use of single-sided and double-sided modules, especially with SIMMs. While most often the number of sides used to carry RAM chips corresponded to the number of ranks, sometimes they ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Memory controller with differential serial connections to DDR2 FB-DIMMs. The AMB is visible in the center of each DIMM. A Fully Buffered DIMM (FB-DIMM) is a type of memory module used in computer systems. It is designed to improve memory performance and capacity by allowing multiple memory modules to be each connected to the memory controller ...
High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked SDRAM from Samsung, AMD and SK Hynix. It is designed to be used in conjunction with high-performance graphics accelerators and network devices. [39] The first HBM memory chip was produced by SK Hynix in 2013. [40]