Search results
Results From The WOW.Com Content Network
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
During the transition from 200 mm to 300 mm wafers in 2001, many bridge tools were used which could process both 200 mm and 300 mm wafers. [74] At the time, 18 companies could manufacture chips in the leading edge 130nm process. [75] In 2006, 450 mm wafers were expected to be adopted in 2012, and 675 mm wafers were expected to be used by 2021.
Piranha solution is used frequently in the microelectronics industry, e.g. to clean photoresist or organic material residue from silicon wafers. It is also widely employed in wet etching of wafers in the semiconductor fabrication process. [1]
Oxidation of silicon is a common and frequent step in the manufacture of integrated circuits (IC). The goal of oxidation is to grow a high quality, uniform oxide layer on a silicon substrate. During oxidation, a chemical reaction between the oxidants and the silicon atoms produces a layer of oxide on the silicon surface of the wafer.
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
This process comes in a sequence pattern as follows. First, the isolation trench pattern is transferred to the silicon wafer. Oxide is deposited on the wafer in the shape of trenches. A photo mask, composed of silicon nitride, is patterned on the top of this sacrificial oxide. A second layer is added to the wafer to create a planar surface.
Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support. It was invented by Michel Bruel of CEA-Leti, and was protected by US patent 5374564. [1] The application of this technological procedure is mainly in the production of silicon-on-insulator (SOI) wafer ...