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The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
The resulting mixture is used to clean organic residues off substrates, for example silicon wafers. [1] Because the mixture is a strong oxidizing agent , it will decompose most organic matter , and it will also hydroxylate most surfaces (by adding –OH groups), making them highly hydrophilic (water-compatible).
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces.
Dry cleaning methods include oxygen and argon plasma treatments to remove unwanted surface layers, or hydrogen bake at elevated temperature to remove native oxide before epitaxy. Pre-gate cleaning is the most critical cleaning step in CMOS fabrication: it ensures that the ca. 2 nm thick oxide of a MOS transistor can be grown in an orderly fashion.