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The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.
In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier. It offers high current gain (typically 200), medium input resistance and a high output resistance.
A bipolar junction transistor (BJT) has terminals labeled base, collector and emitter. A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate ...
Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
At low frequencies and under small-signal conditions, the circuit in Figure 1 can be represented by that in Figure 2, where the hybrid-pi model for the BJT has been employed. The input signal is represented by a Thévenin voltage source v s with a series resistance R s and the load is a resistor R L. This circuit can be used to derive the ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...
The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. [10] Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs.