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In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
XeCl Excimer-Laser Annealing (ELA) is the first key method to produce p-Si by melting a-Si material through laser irradiation. The counterpart of a-Si, polycrystalline silicon, which can be synthesized from amorphous silicon by certain procedures, has several advantages over widely used a-Si TFT: High electron mobility rate;
[1] [2] For semiconductor lasers, the saturation effect is negligible. We derived the gain g for a Fabry-Perot semiconductor laser based on the density matrix equations and expressions for the natural linewidth. [1] [2] Thus, the linewidth theory [2] [8] [9] is an integral part of the nonlinear theory.
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
The laser diode chip removed and placed on the eye of a needle for scale A laser diode with the case cut away. The laser diode chip is the small black chip at the front; a photodiode at the back is used to control output power. SEM (scanning electron microscope) image of a commercial laser diode with its case and window cut away. The anode ...