Search results
Results From The WOW.Com Content Network
use. LNG (10 −8 Ωm) 1375. WEL (10 −8 Ωm) (293 K–298 K) about 1000 – direction dependent. 11 Na sodium. use.
Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium. [1]
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
Electroless nickel-phosphorus plating, also referred to as E-nickel, is a chemical process that deposits an even layer of nickel - phosphorus alloy on the surface of a solid substrate, like metal or plastic. The process involves dipping the substrate in a water solution containing nickel salt and a phosphorus-containing reducing agent, usually ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Superalloy. A superalloy, or high-performance alloy, is an alloy with the ability to operate at a high fraction of its melting point. [1] Key characteristics of a superalloy include mechanical strength, thermal creep deformation resistance, surface stability, and corrosion and oxidation resistance. The crystal structure is typically face ...
The first of these quantities is used in atomic physics, the second in chemistry, but both refer to the same basic property of the element. To convert from "value of ionization energy" to the corresponding "value of molar ionization energy", the conversion is: 1 eV = 96.48534 kJ/mol. 1 kJ/mol = 0.0103642688 eV [12]
The data below tabulates standard electrode potentials (E °), in volts relative to the standard hydrogen electrode (SHE), at: Absolute partial pressure 101.325 kPa (1.00000 atm; 1.01325 bar) for each gaseous reagent — the convention in most literature data but not the current standard state (100 kPa). Variations from these ideal conditions ...