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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.

  3. Transistor - Wikipedia

    en.wikipedia.org/wiki/Transistor

    The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...

  4. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .

  5. Heterojunction bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Heterojunction_bipolar...

    A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .

  6. Point-contact transistor - Wikipedia

    en.wikipedia.org/wiki/Point-contact_transistor

    The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...

  7. Category:Bipolar transistors - Wikipedia

    en.wikipedia.org/wiki/Category:Bipolar_transistors

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  8. Darlington transistor - Wikipedia

    en.wikipedia.org/wiki/Darlington_transistor

    Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]

  9. Transistor–transistor logic - Wikipedia

    en.wikipedia.org/wiki/Transistortransistor_logic

    Transistortransistor logic (TTL) is a logic family built from bipolar junction transistors.Its name signifies that transistors perform both the logic function (the first "transistor") and the amplifying function (the second "transistor"), as opposed to earlier resistor–transistor logic (RTL) and diode–transistor logic (DTL).