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An example of Electron beam lithograph setup. Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). [1]
The proximity effect in electron beam lithography (EBL) is the phenomenon that the exposure dose distribution, and hence the developed pattern, is wider than the scanned pattern due to the interactions of the primary beam electrons with the resist and substrate. These cause the resist outside the scanned pattern to receive a non-zero dose.
Electron lithographs uses electron beams with diameters ranging from two nanometers up to hundreds of nanometers. The electron lithograph is also used to produce computer-generated holograms (CGH). Maskless electron lithography has found wide usage in photomask making for photolithography , low-volume production of semiconductor components, and ...
Massively parallel electron beam lithography has been explored as an alternative to photolithography, and was tested by TSMC, but it did not succeed and the technology from the main developer of the technique, MAPPER, was purchased by ASML, although electron beam lithography was at one point used in chip production by IBM.
The term applies to any lithography method which uses a shorter-wavelength light or beam type than the current state of the art, such as X-ray lithography, electron beam lithography, focused ion beam lithography, and nanoimprint lithography. The term may also be used to describe techniques which achieve finer resolution features from an ...
During his career he established a world class team and led the development of several generations of IBM's electron-beam lithography systems. He is recognized for building the industry's first shaped beam lithography systems. Dr. Pfeiffer was elected IBM Fellow in 1985.
For example, proximity effect correction in electron beam lithography is included as an automated capability on commercial electron-beam lithography tools. Since many non-lithographic processes exhibit their own proximity effects, e.g., chemical-mechanical polishing or plasma etching , these effects can be mixed in with the original OPC.
Electron beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist), [16] ("exposing" the resist) and of selectively removing either exposed or non-exposed regions of the resist ("developing").