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An example of Electron beam lithograph setup. Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). [1]
Electron beam technology is used in cable-isolation treatment, in electron lithography of sub-micrometer and nano-dimensional images, in microelectronics for electron-beam curing of color printing [1] and for the fabrication and modification of polymers, including liquid-crystal films, among many other applications.
This parasitic exposure would degrade the resolution of the photoresist; for 193 nm the optical resolution is the limiting factor anyway, but for electron beam lithography or EUVL it is the electron range that determines the resolution rather than the optics.
LIGA consists of three main processing steps: lithography, electroplating, and molding. There are two main LIGA-fabrication technologies: X-Ray LIGA, which uses X-rays produced by a synchrotron to create high-aspect-ratio structures, and UV LIGA, a more accessible method which uses ultraviolet light to create structures with relatively low aspect ratios.
Massively parallel electron beam lithography has been explored as an alternative to photolithography, and was tested by TSMC, but it did not succeed and the technology from the main developer of the technique, MAPPER, was purchased by ASML, although electron beam lithography was at one point used in chip production by IBM.
Depending on the resist various methods can be used, such as Extreme ultraviolet lithography - EUVL or Electron beam lithography - EBL. The photoresist is removed in the areas, where the target material is to be located, creating an inverse pattern.) Target material (usually a thin metal layer) is deposited (on the whole surface of the wafer).
Electron beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist), [16] ("exposing" the resist) and of selectively removing either exposed or non-exposed regions of the resist ("developing").
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