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The Shockley diode equation, or the diode law, named after transistor co-inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
The narrowing of the collector does not have a significant effect as the collector is much longer than the base. The emitter–base junction is unchanged because the emitter–base voltage is the same. Base-narrowing has two consequences that affect the current: There is a lesser chance for recombination within the "smaller" base region.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
In a circuit with a three terminal device, such as a transistor, the current–voltage curve of the collector-emitter current depends on the base current. This is depicted on graphs by a series of (I C –V CE) curves at different base currents. A load line drawn on this graph shows how the base current will affect the operating point of the ...
Diode I-V diagram. Breakdown voltage is a parameter of a diode that defines the largest reverse voltage that can be applied without causing an exponential increase in the leakage current in the diode. Exceeding the breakdown voltage of a diode, per se, is not destructive; although, exceeding its current capacity will be.
Diode law current–voltage curve. For simplicity, diodes may sometimes be assumed to have no voltage drop or resistance when forward-biased and infinite resistance when reverse-biased. But real diodes are better approximated by the Shockley diode equation, which has an more complicated exponential current–voltage relationship called the ...
Thus, as long as the Zener current (I Z) is above a certain level (called holding current), the voltage across the Zener diode (V Z) will be constant. Resistor, R1, supplies the Zener current and the base current (I B) of NPN transistor (Q1). The constant Zener voltage is applied across the base of Q1 and emitter resistor, R2.
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.