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A quantum field-effect transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) [1] [2] [3] that takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction ...
A European research project demonstrated field effect transistors in which the gate (channel) is controlled via quantum tunnelling rather than by thermal injection, reducing gate voltage from ≈1 volt to 0.2 volts and reducing power consumption by up to 100×.
The MODFET (modulation-doped field-effect transistor) is a high-electron-mobility transistor using a quantum well structure formed by graded doping of the active region. The TFET ( tunnel field-effect transistor ) is based on band-to-band tunneling.
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ( MOSFET ), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics .
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
A modulation-doped field-effect transistor is known as a MODFET. [4] ... Electrons trapped in these dots can then be operated as quantum bits. [5] References
Applications of quantum mechanics include explaining phenomena found in nature as well as developing technologies that rely upon quantum effects, like integrated circuits and lasers. [ note 1 ] Quantum mechanics is also critically important for understanding how individual atoms are joined by covalent bonds to form molecules .
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal , the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material.