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An illustration of OPC (Optical Proximity Correction). The blue Γ-like shape is what chip designers would like printed on a wafer, in green is the pattern on a mask after applying optical proximity correction, and the red contour is how the shape actually prints on the wafer (quite close to the desired blue target).
A benefit of using phase-shift masks in lithography is the reduced sensitivity to variations of feature sizes on the mask itself. This is most commonly used in alternating phase-shift masks, where the linewidth becomes less and less sensitive to the chrome width on the mask, as the chrome width decreases.
In both cases, the mask covers the entire wafer, and simultaneously patterns every die. Contact printing/lithography is liable to damage both the mask and the wafer, [38] and this was the primary reason it was abandoned for high volume production. Both contact and proximity lithography require the light intensity to be uniform across an entire ...
In photolithography, several masks are used in turn, each one reproducing a layer of the completed design, and together known as a mask set. A curvilinear photomask has patterns with curves, which is a departure from conventional photomasks which only have patterns that are completely vertical or horizontal, known as manhattan geometry.
A SÜSS MicroTec MA6 mask aligner. An aligner, or mask aligner, is a system that produces integrated circuits (IC) using the photolithography process. It holds the photomask over the silicon wafer while a bright light is shone through the mask and onto the photoresist. The "alignment" refers to the ability to place the mask over precisely the ...
With a proper optical imaging system between the mask and the wafer (or no imaging system if the mask is sufficiently closely positioned to the wafer such as in early lithography machines), the mask pattern is imaged on a thin layer of photoresist on the surface of the wafer and a light (UV or EUV)-exposed part of the photoresist experiences ...
The mask cost strongly benefits from the use of multiple patterning. The EUV single exposure mask has smaller features which take much longer to write than the immersion mask. Even though mask features are 4x larger than wafer features, the number of shots is exponentially increased for much smaller features.
In semiconductor device fabrication, the inverse lithography technology (ILT) is an approach to photomask design. It is basically an approach to solve an inverse imaging problem : to calculate the shapes of the openings in a photomask ("source") so that the passing light produces a good approximation of the desired pattern ("target") on the ...