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A diode-connected transistor is a method of creating a two-terminal rectifying device (a diode) out of a three-terminal transistor. A characteristic of diode-connected transistors is that they are always in the saturation region for metal–oxide–semiconductor field-effect transistors (MOSFETs) and junction-gate field-effect transistors ...
The low on-resistance property of a MOSFET reduces ohmic losses compared to the diode rectifier (below 32 A in this case), which exhibits a significant voltage drop even at very low current levels. Paralleling two MOSFETs (pink curve) reduces the losses further, whereas paralleling several diodes won't significantly reduce the forward-voltage drop.
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
The MOSFET is also capable of handling higher power than the JFET. [33] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [34] and communications technology (such as smartphones). [35]
A semiconductor diode is a device typically made from a single p–n junction.At the junction of a p-type and an n-type semiconductor, there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers.
Some common power devices are the power MOSFET, power diode, thyristor, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to withstand a larger reverse-bias voltage in the off-state.