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The resulting average drift mobility is: [20] = ¯ where q is the elementary charge, m* is the carrier effective mass, and τ is the average scattering time. If the effective mass is anisotropic (direction-dependent), m * is the effective mass in the direction of the electric field.
Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
where the js are the current densities of electrons (e) and holes (p), the μs the charge carrier mobilities, E is the electric field, n and p the number densities of charge carriers, the Ds are diffusion coefficients, and x is position. The first term of the equations is the drift current, and the second term is the diffusion current.
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Specifically, it is used to evaluate a proxy for charge carrier mobility and a representative carrier lifetime from light-induced changes in conductance. The technique works by photo-generating electrons and holes in a semiconductor, allowing these charge carriers to move under a microwave field, and detecting the resulting changes in the ...