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Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
He was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey, and he invented MOSFET (metal–oxide–semiconductor field-effect transistor), which is the basic element in most of today's electronic equipment, with Mohamed Atalla in 1959. [4] They fabricated both PMOS and NMOS devices with a 20 μm process. [5]
Where two differently-doped regions exist in the same crystal, a semiconductor junction is created. The development of these junctions is the basis of diodes, transistors and all modern electronics. Examples of semiconductors are silicon, germanium, gallium arsenide. After silicon, gallium arsenide is the second most common semiconductor. [3]
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the ...
In contrast, n-channel depletion-mode devices have a conductive channel naturally existing within the transistor. Accordingly, the term threshold voltage does not readily apply to turning such devices on, but is used instead to denote the voltage level at which the channel is wide enough to allow electrons to flow easily.