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Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the ...
He was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey, and he invented MOSFET (metal–oxide–semiconductor field-effect transistor), which is the basic element in most of today's electronic equipment, with Mohamed Atalla in 1959. [4] They fabricated both PMOS and NMOS devices with a 20 μm process. [5]
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction .)
Download as PDF; Printable version; In other projects Wikidata item; ... Pages in category "Semiconductor devices" The following 43 pages are in this category, out of ...
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip .