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Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the ...
Tyagi wrote one internationally acclaimed book Introduction to Semiconductor Materials and Devices, [5] which is widely used in Electrical Engineering, semiconductor devices and material science undergraduate and postgraduate courses. It was published by John Wiley & Sons on 7 March 1991. M. S. Tyagi: Introduction to Semiconductor Materials and ...
Grove was also a noted author and scientist. His first book on semiconductors, Physics and Technology of Semiconductor Devices (1967), [20] has been used by leading universities. Another book he wrote on business operation methods, High Output Management (1983). He also wrote over 40 technical papers and held several patents on semiconductor ...
An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher.