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Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
An NPN grown-junction transistor with the cover removed to show the germanium ingot and the base wire. The grown-junction transistor was the first type of bipolar junction transistor made. [1] It was invented by William Shockley at Bell Labs on June 23, 1948 [2] (patent filed June 26, 1948), six months after the first bipolar point-contact ...
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...
The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier base transit time.
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy-junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. [1]