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Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
Download as PDF; Printable version; In other projects Wikidata item; ... Pages in category "Bipolar transistors" The following 19 pages are in this category, out of ...
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
Integrated injection logic (IIL, I 2 L, or I2L) is a class of digital circuits built with multiple collector bipolar junction transistors (BJT). [1] When introduced it had speed comparable to TTL yet was almost as low power as CMOS , making it ideal for use in VLSI (and larger) integrated circuits .
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The input signal is applied across the ground and the base circuit of the transistor. The output signal appears across ground and the collector of the transistor. Since the emitter is connected to the ground, it is common to signals, input and output. The common-emitter circuit is the most widely used of junction transistor amplifiers.
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy-junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. [1]