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Typical LED package including thermal management design Thermal animation of a high powered A19 sized LED light bulb, created using high resolution computational fluid dynamics (CFD) analysis software, showing temperature contoured LED heat sink and flow trajectories Thermal animation of a high power density industrial PAR 64 LED downlight heat sink design, created using high resolution CFD ...
Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, [10] and 303 lm/W in March 2014. [11] Practical general lighting needs high-power LEDs, of one watt or more.
Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, [9] [10] [11] high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling.
If the atom is in the excited state, it may decay into the lower state by the process of spontaneous emission, releasing the difference in energies between the two states as a photon. The photon will have frequency ν 0 and energy hν 0 , given by: E 2 − E 1 = h ν 0 {\displaystyle E_{2}-E_{1}=h\,\nu _{0}} where h is the Planck constant .
Spontaneous emission is the process in which a quantum mechanical system (such as a molecule, an atom or a subatomic particle) transits from an excited energy state to a lower energy state (e.g., its ground state) and emits a quantized amount of energy in the form of a photon.
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
Slack phonon conductivity model mainly considering acoustic phonon scattering (three-phonon interaction) is given as [27] [28] =, = /, / (>,, where M is the mean atomic weight of the atoms in the primitive cell, V a =1/n is the average volume per atom, T D,∞ is the high-temperature Debye temperature, T is the temperature, N o is the number of ...
The superluminescent diode was reported for the first time by Kurbatov et al. (1971) [2] [3] and Lee, Burrus, and Miller (1973). [4] [3] By 1986 Dr. Gerard A. Alphonse at RCA Laboratories (now SRI International), invented a novel design enabling high power superluminescent diodes. [5]