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The P40 Pro and P40 Pro+ use a larger 6.58" (167.13mm) 19.8:9 1080p+ (1200 × 2640) OLED and a 90 Hz refresh rate, as well as support for HDR10 and DCI-P3. In addition to the infrared face unlock system, all P40 models have an optical (under-screen) fingerprint sensor; Huawei claims the sensor is 30% larger and faster than the P30's.
The Huawei Mate 40 series features Leica optics with similar cameras to the P40. The Mate 40 has a total of 3 cameras: a 50 MP f/1.9 RYYB wide main camera, an 8 MP f/2.4 3X telephoto camera, a 16 MP f/2.2 ultrawide camera. The Mate 40 Pro has a similar triple-camera setup, with arranged in identical manner.
The P40, P40 Pro and P40 Pro+ were unveiled in Paris on 26 March 2020. Some P40 models have a new 50 MP "Ultra Vision" wide sensor with Leica optics. The P40 Pro and P40 Pro+ are the first P series phones to feature a 90 Hz display and infrared face unlock.
The wide lens on P50 and P50 Pro is a new "True-Form" 50 MP IMX766 sensor. Unlike the P40, whose wide lens uses an "Ultra SuperSpectrum" image sensor, P50 uses traditional RGGB sensor instead. The P50's rear camera array consists of a 50 MP wide lens, a 13 MP 16 mm ultrawide lens and an 12 MP telephoto lens with 5x optical zoom.
Nothing Phone 2a Plus MediaTek Dimensity 7350 Pro ... Front-facing camera Fingerprint scanner; Huawei nova 9 ... Huawei P40 Pro 128/256/512 GB
A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
11: The Galaxy Z Flip's ultra-wide camera utilizes the 16 Mp sensor, but images are cropped down to 12 Mp. 12 : The Galaxy S21 and S21+ utilizes either one of two sensors: the Samsung 2LD (Exynos variant) or the Sony IMX555 (Snapdragon variant). [ 70 ]
An active-pixel sensor (APS) is an image sensor, which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. [1] [2] In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as ...