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The temperature of the eutectic bonding procedure is dependent on the used material. The bonding happens at a specific weight-% and temperature, e.g. 370 °C at 2.85 wt-% Si for Au intermediate layer (compare to phase diagram). [5] The procedure of eutectic bonding is divided into following steps: [11] Substrate processing
Moreover, below this temperature almost no Si is deposited on the growth surface. However, Au particles can form Au-Si eutectic droplets at temperatures above 363 °C and adsorb Si from the vapor state (because Au can form a solid-solution with all Si concentrations up to 100%) until reaching a supersaturated state of Si in Au.
Aluminum forms a eutectic with silicon, which is at 577 °C, with a Si content of 12.5% [7] or 12.6%. [8] Up to 1.65% Si can be dissolved in aluminum at this temperature. However, the solubility decreases rapidly with temperature. At 500 °C it is still 0.8% Si, at 400 °C 0.3% Si and at 250 °C only 0.05% Si.
Thus the Si–F bond is significantly stronger than even the C–F bond and is one of the strongest single bonds, while the Si–H bond is much weaker than the C–H bond and is readily broken. Furthermore, the ability of silicon to expand its octet is not shared by carbon, and hence some organosilicon reactions have no organic analogues.
A eutectic system or eutectic mixture (/ j uː ˈ t ɛ k t ɪ k / yoo-TEK-tik) [1] is a type of a homogeneous mixture that has a melting point lower than those of the constituents. [2] The lowest possible melting point over all of the mixing ratios of the constituents is called the eutectic temperature .
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eutectic [49] 57 Lanthanum: La 6 f La 5 Si 3, La 3 Si 2, La 5 Si 4, LaSi, LaSi 2 [50] 58 Cerium: Ce 6 f Ce 5 Si 3, Ce 3 Si 2, Ce 5 Si 4, CeSi, [51] Ce 3 Si 5, CeSi 2 [52] 59 Praseodymium: Pr 6 f Pr 5 Si 3, Pr 3 Si 2, Pr 5 Si 4, PrSi, PrSi 2 [53] 60 Neodymium: Nd 6 f Nd 5 Si 3, Nd 5 Si 4, Nd 5 Si 3,NdSi, Nd 3 Si 4, Nd 2 Si 3, NdSi x [54] 61 ...
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