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  2. Multigate device - Wikipedia

    en.wikipedia.org/wiki/Multigate_device

    A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate ...

  3. Fin field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Fin_field-effect_transistor

    A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.

  4. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    The MOSFET is also capable of handling higher power than the JFET. [33] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [34] and communications technology (such as smartphones). [35]

  5. Multi-gate MOSFET - Wikipedia

    en.wikipedia.org/?title=Multi-gate_MOSFET&...

    Retrieved from "https://en.wikipedia.org/w/index.php?title=Multi-gate_MOSFET&oldid=911273875"

  6. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...

  7. List of MOSFET applications - Wikipedia

    en.wikipedia.org/wiki/List_of_MOSFET_applications

    MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.

  8. Category:MOSFETs - Wikipedia

    en.wikipedia.org/wiki/Category:MOSFETs

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  9. 2N7000 - Wikipedia

    en.wikipedia.org/wiki/2N7000

    The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1] The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use. [2] Packaged in a TO-92 enclosure, the 2N7000 is rated to withstand 60 volts and can switch 200 millamps.