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A Tesla KD503 transistor. KD503 is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. It was produced exclusively by the Czechoslovakian electronics company Tesla. KD503 are packaged in a TO-3 case style (called T41 by Tesla), it is a 20 amp, 80 volt, 150 watt power transistor.
1950's PNP Transistors by General Electric. TOP ROW (L-R): 2N43, 2N44, 2N45, 2N107 and 2N188A BOTTOM ROW: 2N107, 2N191 and 2N241. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications.
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...