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LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
The MOSFET is the basic building block of most modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion (1.3 × 10 22) MOSFETs manufactured between 1960 and 2018. It is the most common semiconductor device in digital and analog circuits, and the most common power device.
The term solid-state became popular at the beginning of the semiconductor era in the 1960s to distinguish this new technology. A semiconductor device works by controlling an electric current consisting of electrons or holes moving within a solid crystalline piece of semiconducting material such as silicon, while the thermionic vacuum tubes it replaced worked by controlling a current of ...
class 10, class 100, etc. – a measure of the air quality in a cleanroom; class 10 means fewer than 10 airborne particles of size 0.5 μm or larger are permitted per cubic foot of air; cleanroom (clean room) – a specialized manufacturing environment that maintains extremely low levels of particulates; CMP – see chemical-mechanical polishing
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations