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In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
The manufacture of semiconductors controls precisely the location and concentration of p- and n-type dopants. The connection of n-type and p-type semiconductors form p–n junctions. The most common semiconductor device in the world is the MOSFET (metal–oxide–semiconductor field-effect transistor), [1] also called the MOS transistor.
The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics led in turn to the invention of the transistor in 1947 [ 7 ] and the integrated circuit in 1958.
We tested out the ReMarkable tablet to see if it really can replace paper notebooks like the brand says. Here's what we thought.
Unlike electronic integration where silicon is the dominant material, system photonic integrated circuits have been fabricated from a variety of material systems, including electro-optic crystals such as lithium niobate, silica on silicon, silicon on insulator, various polymers, and semiconductor materials which are used to make semiconductor lasers such as GaAs and InP.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Likewise, it has been shown that for most of the oxide based materials studies for magnetic semiconductors do not exhibit an intrinsic carrier-mediated ferromagnetism as postulated by Dietl et al. [9] To date, GaMnAs remains the only semiconductor material with robust coexistence of ferromagnetism persisting up to rather high Curie temperatures ...
The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), [12] invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, [13] enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. [12]