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The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
The transistor continuously monitors V diff and adjusts its emitter voltage to equal V in minus the mostly constant V BE (approximately one diode forward voltage drop) by passing the collector current through the emitter resistor R E. As a result, the output voltage follows the input voltage variations from V BE up to V +; hence the name ...
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...
Energy band diagram of a simple NPN w:bipolar junction transistor in forward-active mode showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.
Description: PNP transistor symbol with case (IEEE 315). Note: A little confusing on the BJT page, because the NPN is drawn with Collector (C) on the top, while here it is drawn on the bottom.