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The physical properties of gallium are highly anisotropic, i.e. have different values along the three major crystallographic axes a, b, and c (see table), producing a significant difference between the linear (α) and volume thermal expansion coefficients. The properties of gallium are strongly temperature-dependent, particularly near the ...
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, [9] [10] [11] high-power
Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm . [ 1 ] It has a room temperature direct bandgap of approximately 0.73 eV.
Also, it is formed on heating gallium in air or by thermally decomposing gallium nitrate at 200–250 °C. Crystalline Ga 2 O 3 can occur in five polymorphs, α, β, γ, δ, and ε. Of these polymorphs β-Ga 2 O 3 is the most thermodynamically stable phase at standard temperature and pressure [ 14 ] while α-Ga 2 O 3 is the most stable ...
Galinstan is a brand name for an alloy composed of gallium, indium, and tin which melts at −19 °C (−2 °F) and is thus liquid at room temperature. [4] [5] In scientific literature, galinstan is also used to denote the eutectic alloy of gallium, indium, and tin, which melts at around +11 °C (52 °F). [5]
The name was first given to iron-gallium alloys by United States Navy researchers in 1998 when they discovered that adding gallium to iron could amplify iron's magnetostrictive effect up to tenfold. Galfenol is of interest to sonar researchers because magnetostrictor materials are used to detect sound, and amplifying the magnetostrictive effect ...