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Compression Attached Memory Module (CAMM) is a memory module form factor which uses a land grid array, and developed at Dell by engineer Tom Schnell as a replacement for DIMMs and SO-DIMMs which use edge connectors and had been in use for about 25 years. [1] The first SO-DIMMs were introduced by JEDEC in 1997. [2] [3] [4] [5]
A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink. Random-access memory (RAM; / r æ m /) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code.
Historical lowest retail price of computer memory and storage Electromechanical memory used in the IBM 602, an early punch multiplying calculator Detail of the back of a section of ENIAC, showing vacuum tubes Williams tube used as memory in the IAS computer c. 1951 8 GB microSDHC card on top of 8 bytes of magnetic-core memory (1 core is 1 bit.)
As with earlier memory generations, faster DDR3 memory became available after the release of the initial versions. DDR3-2000 memory with 9-9-9-28 latency (9 ns) was available in time to coincide with the Intel Core i7 release in late 2008, [ 19 ] while later developments made DDR3-2400 widely available (with CL 9–12 cycles = 7.5–10 ns), and ...
Intel Turbo Memory is a technology introduced by Intel Corporation that uses NAND flash memory modules to reduce the time it takes for a computer to power up, access programs, and write data to the hard drive. During development, the technology was codenamed Robson. [1]
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.