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Double Data Rate 2 Synchronous Dynamic Random-Access Memory (DDR2 SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It is a JEDEC standard (JESD79-2); first published in September 2003. [2] DDR2 succeeded the original DDR SDRAM specification, and was itself succeeded by DDR3 SDRAM in 2007.
DDR2 started to be effective by the end of 2004, as modules with lower latencies became available. [ 19 ] Memory manufacturers stated that it was impractical to mass produce DDR1 memory with effective transfer rates in excess of 400 MHz (i.e. 400 MT/s and 200 MHz external clock) due to internal speed limitations.
Corresponding 240-pin DIMMs are known as PC2-3200 through PC2-6400. DDR2 SDRAM is now available at a clock rate of 533 MHz generally described as DDR2-1066 and the corresponding DIMMs are known as PC2-8500 (also named PC2-8600 depending on the manufacturer). Performance up to DDR2-1250 (PC2-10000) is available.
Kingston began manufacturing removable disk drive storage products in 1989 in their Kingston Storage Products Division. By 2000, it was decided to spin off the product line and become a sister company, StorCase Technology, Inc. [9] StorCase ceased operations in 2006 after selling the designs and rights to manufacture its products to competitor CRU-DataPort.
Memory controller with differential serial connections to DDR2 FB-DIMMs. The AMB is visible in the center of each DIMM. A Fully Buffered DIMM (FB-DIMM) is a type of memory module used in computer systems. It is designed to improve memory performance and capacity by allowing multiple memory modules to be each connected to the memory controller ...
Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952.
Column address strobe latency, also called CAS latency or CL, is the delay in clock cycles between the READ command and the moment data is available. [1] [2] In asynchronous DRAM, the interval is specified in nanoseconds (absolute time). [3]