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An insulated-gate bipolar transistor ... Products of non-latch-up IGBTs were first commercialized by Toshiba in 1985. This was the real birth of the present IGBT.
The locomotive uses Toshiba-made 3-phase AC motors, powered through Insulated-gate bipolar transistor (IGBT) control. It is a dual-voltage locomotive, designed to operate on either 3 kV DC or 25 kV AC. Like the earlier Classes 7E1, 7E4, 9E, 11E, 15E and 18E electric locomotives, these engines have driving cabs at one end only since they would ...
NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986. [47] Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987. [37] Toshiba's 4 Mb EPROM memory chip in 1987. [47] Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987. [47]
In the early 1980s, he invented the insulated gate bipolar transistor that combines sciences from two streams: Electronics engineering and Electrical engineering. It is a transistor switch that was immediately put into production once invented. This has resulted in cost savings of over $15 trillion for consumers, and is forming a basis for ...
Insulated-gate bipolar transistor (IGBT) These devices have the best characteristics of MOSFETs and BJTs. Like MOSFET devices, the insulated gate bipolar transistor has a high gate impedance, thus low gate current requirements. Like BJTs, this device has low on state voltage drop, thus low power loss across the switch in operating mode.
In 1982, the insulated-gate bipolar transistor (IGBT) was introduced. It became widely available in the 1990s. This component has the power handling capability of the bipolar transistor and the advantages of the isolated gate drive of the power MOSFET.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
This included changing the existing Mitsubishi Electric propulsion system for the newer Insulated-gate bipolar transistor (IGBT) and Permanent Magnet Synchronous Motor (PMSM) propulsion system by Toshiba, technology currently used in the Tokyo Metro's 1000 series and 16000 series trains as well as the JR Kyushu 305 series and Hankyu 1000 series ...