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In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
Thus for example a NPN gate driven by a PNP gate would see the threshold voltage of -6V in the middle of the range of 0V to -12V. Similarly for the PNP gate switching at 0V driven by a range of 6V to -6V. The 1401 used germanium transistors and diodes in its basic gates. [7] The 1401 also added an inductor in series with R2.
TRADIC. This is a list of transistorized computers, which were digital computers that used discrete transistors as their primary logic elements. Discrete transistors were a feature of logic design for computers from about 1960, when reliable transistors became economically available, until monolithic integrated circuits displaced them in the 1970s.
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
On-state V CA drops to around 2 V, which is compatible with Transistor–transistor logic (TTL) and CMOS logic gates with 5 V power supply. [40] Low-voltage CMOS (e.g. 3.3 V or 1.8 V logic) requires level conversion with a resistive voltage divider , [ 40 ] or replacing the TL431 with a low-voltage alternative like the TLV431.
[37] [38] The first production-model pocket transistor radio was the Regency TR-1, released in October 1954. [25] Produced as a joint venture between the Regency Division of Industrial Development Engineering Associates, I.D.E.A. and Texas Instruments of Dallas, Texas, the TR-1 was manufactured in Indianapolis, Indiana. It was a near pocket ...
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The current source transistor may be replaced with a resistor from the positive supply to the base of the inverter transistor, since discrete resistors are smaller and less expensive than discrete transistors. Similarly, the merged PNP current injector transistor and the NPN inverter transistor can be implemented as separate discrete components.