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Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. [1] [2] [3] An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
Software can "partition" a portion of a computer's RAM, allowing it to act as a much faster hard drive that is called a RAM disk. A RAM disk loses the stored data when the computer is shut down, unless memory is arranged to have a standby battery source, or changes to the RAM disk are written out to a nonvolatile disk.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access .
The CMOS RAM and the real-time clock have been integrated as a part of the southbridge chipset and they may not be standalone chips on modern motherboards. [4] [5] In turn, the southbridge has been integrated into a single Platform Controller Hub. Alternatively BIOS settings may be stored in the computer's Super I/O chip. [6]
[9] [10] On November 15, 2018, SK Hynix announced completion of its first DDR5 RAM chip; running at 5.2 GT/s at 1.1 V. [11] In February 2019, SK Hynix announced a 6.4 GT/s chip, the highest speed specified by the preliminary DDR5 standard. [12] The first production DDR5 DRAM chip was officially launched by SK Hynix on October 6, 2020. [13] [14]
For example a stick of RAM that has only 512 megabytes of transfer speed is too slow compared to a stick of RAM that has 16 gigabytes of transfer speeds. [5] Not only does the transfer speeds depend of how fast a RAM can process information, the type of stick of RAM depends as well. For example, there are sticks that can be used DDR3, DDR4 and ...