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Generally, forced convection heat sink thermal performance is improved by increasing the thermal conductivity of the heat sink materials, increasing the surface area (usually by adding extended surfaces, such as fins or foam metal) and by increasing the overall area heat transfer coefficient (usually by increase fluid velocity, such as adding ...
Thus, indirectly, thermal velocity is a measure of temperature. Technically speaking, it is a measure of the width of the peak in the Maxwell–Boltzmann particle velocity distribution. Note that in the strictest sense thermal velocity is not a velocity, since velocity usually describes a vector rather than simply a scalar speed.
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
A BJT uses a single crystal of material in its circuit that is divided into two types of semiconductor, an n-type and p-type. These two types of doped semiconductors are spread over three different regions in respective order: the emitter region, the base region and the collector region. The emitter region and collector region are quantitively ...
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
In particular, the group velocity dispersion (that is, the extent to which group velocity varies with wavelength) can be closely controlled. In bulk silicon at 1.55 micrometres, the group velocity dispersion (GVD) is normal in that pulses with longer wavelengths travel with higher group velocity than those with shorter wavelength.
This velocity is a characteristic of the material and a strong function of doping or impurity levels and temperature. It is one of the key material and semiconductor device properties that determine a device such as a transistor's ultimate limit of speed of response and frequency.