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[12] [13] The invention of the MOSFET enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores. [14] The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS static random-access memory (SRAM).
The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), [12] invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, [13] enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. [12]
Like the floating gate memory cell, a charge trapping cell uses a variable charge between the control gate and the channel to change the threshold voltage of the transistor. The mechanisms to modify this charge are relatively similar between the floating gate and the charge trap, and the read mechanisms are also very similar.
Also, some of those steps require very high temperatures and must take place after the logic transistors are formed, possibly damaging them. 1T-SRAM is also available in device (IC) form. The GameCube was the first video game system to use 1T-SRAM as main memory storage; the GameCube possesses several dedicated 1T-SRAM devices. 1T-SRAM is also ...
An illustration of the write amplification phenomenon in flash-based storage devices. Over time, advancements in central processing unit (CPU) speed has driven innovation in secondary storage technology. [7] One such innovation, flash memory, is a non-volatile storage medium that can be electrically erased and reprogrammed.
The basis for memory card technology is flash memory. [2] It was invented by Fujio Masuoka at Toshiba in 1980 [3] [4] and commercialized by Toshiba in 1987. [5] [6] The development of memory cards was driven in the 1980s by the need for an alternative to floppy disk drives that had lower power consumption, had less weight and occupied less ...
SanDisk X4 flash memory cards, introduced in 2009, was one of the first products based on NAND memory that stores 4 bits per cell, commonly referred to as quad-level-cell (QLC), using 16 discrete charge levels (states) in each individual transistor. The QLC chips used in these memory cards were manufactured by Toshiba, SanDisk and SK Hynix. [30 ...
It was the fourth member of the IBM System/370 line of computers, [a] and was the first IBM computer to use semiconductor memory for its main memory instead of magnetic core memory. [4] It was described as being five times faster than the IBM System/360 Model 40. First shipments were scheduled for late summer of 1971. [1]