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30 varnished silicon steel foils each of thickness 0.0172 inches (0.4368 mm); density 7.51 g cm −3; measured near a temperature of 358.2 K under pressure in the range 0 — 128 psi: 0 psi 0.433 w m −1 K −1 20 psi 0.807 40 psi 0.965 60 psi 1.04 80 psi 1.10 100 psi 1.18 120 psi 1.24 128 psi 1.26 120 psi 1.26 100 psi 1.22 80 psi 1.18 60 psi ...
A Assuming an altitude of 194 metres above mean sea level (the worldwide median altitude of human habitation), an indoor temperature of 23 °C, a dewpoint of 9 °C (40.85% relative humidity), and 760 mmHg sea level–corrected barometric pressure (molar water vapor content = 1.16%). B Calculated values *Derived data by calculation.
Hence pure silicon is effectively an insulator at room temperature. However, doping silicon with a pnictogen such as phosphorus, arsenic, or antimony introduces one extra electron per dopant and these may then be excited into the conduction band either thermally or photolytically, creating an n-type semiconductor.
(room temperature) (alpha, amorphous) 135.1 CR2 (10 −8 Ωm) (room temperature) (alpha, crystalline) 121.7 CR2 (10 −8 Ωm) (room temperature) (alpha, polycrystalline) 131.0 LNG (10 −8 Ωm) 131 WEL (10 −8 Ωm) (293 K–298 K) 130 65 Tb terbium; use (room temperature) (alpha, polycrystalline) 1.150 μΩm CRC (10 −8 Ωm) (290 K–300 K) 115
Typical electron mobility at room temperature (300 K) in metals like gold, copper and silver is 30–50 cm 2 /(V⋅s). Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s).
Elastic properties describe the reversible deformation (elastic response) of a material to an applied stress.They are a subset of the material properties that provide a quantitative description of the characteristics of a material, like its strength.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...