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Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.
Electromigration (red arrow) is due to the momentum transfer from the electrons moving in a wire. Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms.
eFuses can be made out of silicon or metal traces. In both cases, they work (blow) by electromigration, the phenomenon where electric flow causes the conductor material to move. Although electromigration is generally undesired in chip design as it causes failures, eFuses are made of weak traces that are designed to fail before others do. [3] [4]
Black's Equation is a mathematical model for the mean time to failure (MTTF) of a semiconductor circuit due to electromigration: a phenomenon of molecular rearrangement (movement) in the solid phase caused by an electromagnetic field. The equation is: [1] = ()
Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode. The process is most commonly observed in printed circuit boards where it may significantly decrease the insulation between conductors.
The Nernst–Planck equation is a conservation of mass equation used to describe the motion of a charged chemical species in a fluid medium. It extends Fick's law of diffusion for the case where the diffusing particles are also moved with respect to the fluid by electrostatic forces.
Feedback-controlled electromigration (FCE) is an experimental technique to investigate the phenomenon known as electromigration. By controlling the voltage applied as the conductance varies it is possible to keep the voltage at a critical level for electromigration .
Grain boundary sliding (GBS) is a material deformation mechanism where grains slide against each other. This occurs in polycrystalline material under external stress at high homologous temperature (above ~0.4 [1]) and low strain rate and is intertwined with creep.