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  2. Negative-bias temperature instability - Wikipedia

    en.wikipedia.org/wiki/Negative-bias_temperature...

    Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging.NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET.

  3. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form p–n junctions with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to ...

  4. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    [2] Certain semiconductor fabrication technologies also include deep trench isolation , a related feature often found in analog integrated circuits . The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [ 3 ] or "inverse narrow width effect". [ 4 ]

  5. Mead–Conway VLSI chip design revolution - Wikipedia

    en.wikipedia.org/wiki/Mead–Conway_VLSI_chip...

    The Mead–Conway VLSI chip design revolution, or Mead and Conway revolution, was a very-large-scale integration design revolution starting in 1978 which resulted in a worldwide restructuring of academic materials in computer science and electrical engineering education, and was paramount for the development of industries based on the application of microelectronics.

  6. Electronic system-level design and verification - Wikipedia

    en.wikipedia.org/wiki/Electronic_system-level...

    The VLSI handbook (2nd ed.). CRC Press. ISBN 978-0-8493-4199-1. chapter 76. Brian Bailey; Grant Martin (2010). ESL Models and Their Application: Electronic System Level Design and Verification in Practice. Springer. ISBN 978-1-4419-0964-0. Frank Rogin; Rolf Drechsler (2010). Debugging at the Electronic System Level. Springer.

  7. Intel wins US appeal to overturn $2.18 billion VLSI patent ...

    www.aol.com/news/intel-wins-us-appeal-overturn...

    WASHINGTON (Reuters) -A U.S. appeals court on Monday threw out a $2.18 billion patent-infringement award won by patent owner VLSI Technology against Intel Corp, overturning one of the largest ...

  8. NMOS logic - Wikipedia

    en.wikipedia.org/wiki/NMOS_logic

    [1] [2] NMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type source and drain terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of ...

  9. Photomask - Wikipedia

    en.wikipedia.org/wiki/Photomask

    [1] [2] In photolithography, several masks are used in turn, each one reproducing a layer of the completed design, and together known as a mask set. A curvilinear photomask has patterns with curves, which is a departure from conventional photomasks which only have patterns that are completely vertical or horizontal, known as manhattan geometry.