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Rubylith is used in many areas of graphic design, typically to produce masks for various printing techniques. For example it is often used to mask off areas of a design when using a photoresist to produce printing plates for offset lithography or gravure. It is also frequently used during screen-printing.
In both cases, the mask covers the entire wafer, and simultaneously patterns every die. Contact printing/lithography is liable to damage both the mask and the wafer, [38] and this was the primary reason it was abandoned for high volume production. Both contact and proximity lithography require the light intensity to be uniform across an entire ...
In photolithography, several masks are used in turn, each one reproducing a layer of the completed design, and together known as a mask set. A curvilinear photomask has patterns with curves, which is a departure from conventional photomasks which only have patterns that are completely vertical or horizontal, known as manhattan geometry.
An illustration of OPC (Optical Proximity Correction). The blue Γ-like shape is what chip designers would like printed on a wafer, in green is the pattern on a mask after applying optical proximity correction, and the red contour is how the shape actually prints on the wafer (quite close to the desired blue target).
There are several types of contact lithography masks. The standard binary intensity amplitude mask defines dark and light areas where light is blocked or transmitted, respectively. The dark areas are patterned films consisting of chromium or other metal. The light coupling mask has a corrugated dielectric surface. Each protrusion acts as a ...
A benefit of using phase-shift masks in lithography is the reduced sensitivity to variations of feature sizes on the mask itself. This is most commonly used in alternating phase-shift masks, where the linewidth becomes less and less sensitive to the chrome width on the mask, as the chrome width decreases.
A key advantage of maskless lithography is the ability to change lithography patterns from one run to the next, without incurring the cost of generating a new photomask. This may prove useful for double patterning or compensation of non-linear material behavior (e.g. when utilizing cheaper, non-crystalline substrate or to compensate for random ...
As 45 nm goes into full production and EUV lithography introduction is delayed, 32 nm and 22 nm are expected to run on existing 193 nm scanners technology. Now, not only are throughput and capabilities concerns resurfacing, but also new computational lithography techniques such as Source Mask Optimization (SMO) is seen as a way to squeeze ...