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The hole mobility is defined by a similar equation: =. Both electron and hole mobilities are positive by definition. Usually, the electron drift velocity in a material is directly proportional to the electric field, which means that the electron mobility is a constant (independent of the electric field).
For holes, is the number of holes per unit volume in the valence band. To calculate this number for electrons, we start with the idea that the total density of conduction-band electrons, n 0 {\displaystyle n_{0}} , is just adding up the conduction electron density across the different energies in the band, from the bottom of the band E c ...
In general, however, the value of effective mass depends on the purpose for which it is used, and can vary depending on a number of factors. For electrons or electron holes in a solid, the effective mass is usually stated as a factor multiplying the rest mass of an electron, m e (9.11 × 10 −31 kg).
is the mobility (m 2 /(V·s)). In other words, the electrical mobility of the particle is defined as the ratio of the drift velocity to the magnitude of the electric field: =. For example, the mobility of the sodium ion (Na +) in water at 25 °C is 5.19 × 10 −8 m 2 /(V·s). [1]
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
The carrier particles, namely the holes and electrons of a semiconductor, move from a place of higher concentration to a place of lower concentration. Hence, due to the flow of holes and electrons there is a current. This current is called the diffusion current. The drift current and the diffusion current make up the total current in the conductor.
The "holes" are, in effect, electron vacancies in the valence-band electron population of the semiconductor and are treated as charge carriers because they are mobile, moving from atom site to atom site. In n-type semiconductors, electrons in the conduction band move through the crystal, resulting in an electric current.
Measured carrier mobilities for electrons and holes are shown in Figure 4. The mobility of carriers in Ga 0.47 In 0.53 As is unusual in two regards: The very high value of electron mobility; The unusually large ratio of electron to hole mobility. The room temperature electron mobility for reasonably pure samples of Ga 0.47 In