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A high voltage MOSFET requires a thick, low-doped layer, i.e., highly resistive, whereas a low-voltage transistor only requires a thin layer with a higher doping level, i.e., less resistive. As a result, R n is the main factor responsible for the resistance of high-voltage MOSFETs; R D is the equivalent of R S for the drain.
With the ability to place high-voltage circuitry (in a ‘well’ formed by polysilicon rings), that can ‘float’ 600 V or 1200 V, on the same silicon away from the rest of the low-voltage circuitry, high-side power MOSFETs or IGBTs exist in many popular off-line circuit topologies such as buck, synchronous boost, half-bridge, full-bridge ...
When the low-side N-FET is on, current from the power rail (V+) flows through the bootstrap diode and charges the bootstrap capacitor through that low-side N-FET. When the low-side N-FET turns off, the low side of the bootstrap capacitor remains connected to the source of the high-side N-FET, and the capacitor discharges some of its energy ...
Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.
The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. As MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.
Open drain output uses MOS transistor (MOSFET) instead of BJTs, and expose the MOSFET's drain as output. [1]: 488ff An nMOS open drain output connects to ground when a high voltage is applied to the MOSFET's gate, or presents a high impedance when a low voltage is applied to the gate.
The most efficient MOSFET designs use N-channel MOSFETs on both the high side and low side because they typically have a third of the ON resistance of P-channel MOSFETs. This requires a more complex design since the gates of the high side MOSFETs must be driven positive with respect to the DC supply rail.
The MOSFET is also capable of handling higher power than the JFET. [35] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [36] and communications technology (such as smartphones). [37]