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The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The height of the lines and bars gives an indication of the maximal power/pulse energy commercially available, while the color codifies the type of laser material (see the figure description for details). Most of the data comes from Weber's book Handbook of laser wavelengths, [1] with newer data in particular for the semiconductor lasers.
The laser induces local thermal gradients in the device, which result in changes to the amount of power that the device uses. A laser is scanned over the surface of the device while it is under electrical bias. The device is biased using a constant current source, and the power supply pin voltage is monitored for changes.
The device being tested is electrically stimulated and the device output is monitored. This technique is applied to the back side of the semiconductor device, thereby allowing direct access of the laser to the device active diffusion regions. The effect of the laser on the active transistor region is to generate a localized photocurrent. This ...
The amount of process-initiating Gibbs free energy in a deformed metal is also reduced by the annealing process. In practice and industry, this reduction of Gibbs free energy is termed stress relief. [citation needed] The relief of internal stresses is a thermodynamically spontaneous process; however, at room temperatures, it is a very slow ...